When lots of energy hits an atom, it can knock off electrons, making the atom extremely chemically reactive and initiating further destruction. That’s why radiation is so dangerous.
Two-dimensional electronic devices could inch closer to their ultimate promise of low power, high efficiency and mechanical flexibility with a processing technique developed at the Department of Energy’s Oak Ridge National Laboratory.
Researchers at the Department of Energy's Oak Ridge National Laboratory have combined advanced in-situ microscopy and theoretical calculations to uncover important clues to the properties of a promising next-generation energy storage material for
Measurement and data analysis techniques developed at the Department of Energy’s Oak Ridge National Laboratory could provide new insight into performance-robbing flaws in crystalline structures, ultimately improving the performance of solar cells.
Stacking layers of nanometer-thin semiconducting materials at different angles is a new approach to designing the next generation of energy-efficient transistors and solar cells. The atoms in each layer are arranged in hexagonal arrays.
To tailor tiny nanocrystals for catalysts, semiconductors and other applications, scientists must predict what happens inside the particle, at the boundary and in the solvent during particle growth.
Understanding where and how phase transitions occur is critical to developing new generations of the materials used in high-performance batteries, sensors, energy-harvesting devices, medical diagnostic equipment and other applications.