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Media Contacts
![Materials — Molding molecular matter](/sites/default/files/styles/list_page_thumbnail/public/2020-04/Ebeam_IMAGE_Final_0.jpg?h=c4322a57&itok=uYF8ugqx)
Scientists at Oak Ridge National Laboratory used a focused beam of electrons to stitch platinum-silicon molecules into graphene, marking the first deliberate insertion of artificial molecules into a graphene host matrix.
![Polymer self-assembly at the liquid-liquid interface in real time](/sites/default/files/styles/list_page_thumbnail/public/2020-02/descent.png?h=d1cb525d&itok=rz3eSM-H)
OAK RIDGE, Tenn., Feb. 27, 2020 — Researchers at Oak Ridge National Laboratory and the University of Tennessee achieved a rare look at the inner workings of polymer self-assembly at an oil-water interface to advance materials for neuromorphic computing and bio-inspired technologies.
![Scanning probe microscopes use an atom-sharp tip—only a few nanometers thick—to image materials on a nanometer length scale. The probe tip, invisible to the eye, is attached to a cantilever (pictured) that moves across material surfaces like the tone arm on a record player. Credit: Genevieve Martin/Oak Ridge National Laboratory; U.S. Dept. of Energy.](/sites/default/files/styles/list_page_thumbnail/public/2020-01/2019-P15115.jpg?h=c6980913&itok=o69jyoNw)
Liam Collins was drawn to study physics to understand “hidden things” and honed his expertise in microscopy so that he could bring them to light.
![ORNL-developed cryogenic memory cell circuit designs fabricated onto these small chips by SeeQC, a superconducting technology company, successfully demonstrated read, write and reset memory functions. Credit: Carlos Jones/Oak Ridge National Laboratory, U.S. Dept. of Energy](/sites/default/files/styles/list_page_thumbnail/public/2020-01/2019-P17636.png?h=39b94f55&itok=udTwXJwT)
Scientists at have experimentally demonstrated a novel cryogenic, or low temperature, memory cell circuit design based on coupled arrays of Josephson junctions, a technology that may be faster and more energy efficient than existing memory devices.