Six ORNL scientists have been elected as fellows to the American Association for the Advancement of Science, or AAAS.
Two scientists with the Department of Energy’s Oak Ridge National Laboratory have been elected fellows of the American Physical Society.
Led by ORNL and the University of Tennessee, Knoxville, a study of a solar-energy material with a bright future revealed a way to slow phonons, the waves that transport heat.
From materials science and earth system modeling to quantum information science and cybersecurity, experts in many fields run simulations and conduct experiments to collect the abundance of data necessary for scientific progress.
Five researchers at the Department of Energy’s Oak Ridge National Laboratory have been named ORNL Corporate Fellows in recognition of significant career accomplishments and continued leadership in their scientific fields.
A team led by the Department of Energy’s Oak Ridge National Laboratory synthesized a tiny structure with high surface area and discovered how its unique architecture drives ions across interfaces to transport energy or information.
Research by an international team led by Duke University and the Department of Energy’s Oak Ridge National Laboratory scientists could speed the way to safer rechargeable batteries for consumer electronics such as laptops and cellphones.
We have a data problem. Humanity is now generating more data than it can handle; more sensors, smartphones, and devices of all types are coming online every day and contributing to the ever-growing global dataset.
An international team of researchers has discovered the hydrogen atoms in a metal hydride material are much more tightly spaced than had been predicted for decades — a feature that could possibly facilitate superconductivity at or near room temperature and pressure.
Scientists at have experimentally demonstrated a novel cryogenic, or low temperature, memory cell circuit design based on coupled arrays of Josephson junctions, a technology that may be faster and more energy efficient than existing memory devices.