For contributions to the methodology for electronic structure calculations and in applications to diverse classes of materials.
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All Corporate Fellow summaries reflect the awardee and ORNL at the time the fellowship was awarded.
2009
2004
For innovative research in nuclear structure physics, particularly in areas leading to a quantitative understanding of the excitation and decay of the elementary collective modes of nuclei, and for vision and scientific and technical leadership in building the Holifield Radioactive Ion Beam Facility into a forefront laboratory for nuclear science.
For leadership and pioneering research in the fundamental effects of radiation on a broad range of metals and ceramics applicable to fission and fusion energy systems.
1999
For pioneering accomplishments in the fields of global optimization, artificial neural networks, and high performance computing based on quantum devices.
For distinguished contributions to energy policy research and analysis for transportation, and for advancing understanding of the transportation sector's role in energy and environmental concerns.
For fundamental research establishing fission-imposed limits on rotating nuclei, and for extensive studies of heavy ion reactions from low to ultrarelativistic energies.
1986
For contributions to advanced control systems for nuclear reactor, including development of control-system and plant protection technologies that permit automated start-up and operation; and to analysis techniques that have led to better understanding of reactor dynamics.
For contributions to understanding plasma turbulence and the nonlinear properties of magnetohydrodynamic instabilities, especially their role in explaining the behavior of magnetically confined plasmas, and for development of new magnetic confinement concepts that overcome these limitations.
1983
For internationally recognized contributions to understanding the late effects of radiation, radiation carcinogenesis
For theoretical research on the electronic and vibronic structures and optical properties of defects in ionic crystals, and for work at the forefront of the rapidly developing field of laser annealing of semiconductors, leading to advances in the photovoltaic conversion of solar energy.