Using neutrons to see the additive manufacturing process at the atomic level, scientists have shown that they can measure strain in a material as it evolves and track how atoms move in response to stress.
As current courses through a battery, its materials erode over time. Mechanical influences such as stress and strain affect this trajectory, although their impacts on battery efficacy and longevity are not fully understood.
An advance in a topological insulator material — whose interior behaves like an electrical insulator but whose surface behaves like a conductor — could revolutionize the fields of next-generation electronics and quantum computing, according to scientists at ORNL.
ORNL’s Debangshu Mukherjee has been named an npj Computational Materials “Reviewer of the Year.”
Laboratory Director Thomas Zacharia presented five Director’s Awards during Saturday night's annual Awards Night event hosted by UT-Battelle, which manages ORNL for the Department of Energy.
Adrian Sabau of the Department of Energy’s Oak Ridge National Laboratory has been named an ASM International Fellow.
ORNL scientists will present new technologies available for licensing during the annual Technology Innovation Showcase. The event is 9 a.m. to 3 p.m. Thursday, June 16, at the Manufacturing Demonstration Facility at ORNL’s Hardin Valley campus.
Researchers at ORNL are teaching microscopes to drive discoveries with an intuitive algorithm, developed at the lab’s Center for Nanophase Materials Sciences, that could guide breakthroughs in new materials for energy technologies, sensing and computing.
University of Pennsylvania researchers called on computational systems biology expertise at Oak Ridge National Laboratory to analyze large datasets of single-cell RNA sequencing from skin samples afflicted with atopic dermatitis.
A study led by researchers at ORNL used the nation’s fastest supercomputer to close in on the answer to a central question of modern physics that could help conduct development of the next generation of energy technologies.