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In fiscal year 2023 — Oct. 1–Sept. 30, 2023 — Oak Ridge National Laboratory was awarded more than $8 million in technology maturation funding through the Department of Energy’s Technology Commercialization Fund, or TCF.
Tomonori Saito, a distinguished innovator in the field of polymer science and senior R&D staff member at ORNL, was honored on May 11 in Columbus, Ohio, at Battelle’s Celebration of Solvers.
Chemist Jeff Foster is looking for ways to control sequencing in polymers that could result in designer molecules to benefit a variety of industries, including medicine and energy.
The U.S. Departments of Energy and Defense teamed up to create a series of weld filler materials that could dramatically improve high-strength steel repair in vehicles, bridges and pipelines.
At the Department of Energy’s Oak Ridge National Laboratory, scientists use artificial intelligence, or AI, to accelerate the discovery and development of materials for energy and information technologies.
Scientists seeking ways to improve a battery’s ability to hold a charge longer, using advanced materials that are safe, stable and efficient, have determined that the materials themselves are only part of the solution.
From materials science and earth system modeling to quantum information science and cybersecurity, experts in many fields run simulations and conduct experiments to collect the abundance of data necessary for scientific progress.
In the race to identify solutions to the COVID-19 pandemic, researchers at the Department of Energy’s Oak Ridge National Laboratory are joining the fight by applying expertise in computational science, advanced manufacturing, data science and neutron science.
The formation of lithium dendrites is still a mystery, but materials engineers study the conditions that enable dendrites and how to stop them.
Scientists at have experimentally demonstrated a novel cryogenic, or low temperature, memory cell circuit design based on coupled arrays of Josephson junctions, a technology that may be faster and more energy efficient than existing memory devices.