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A new method to control quantum states in a material is shown. The electric field induces polarization switching of the ferroelectric substrate, resulting in different magnetic and topological states. Credit: Mina Yoon, Fernando Reboredo, Jacquelyn DeMink/ORNL, U.S. Dept. of Energy

An advance in a topological insulator material — whose interior behaves like an electrical insulator but whose surface behaves like a conductor — could revolutionize the fields of next-generation electronics and quantum computing, according to scientists at ORNL.

Researchers captured atomic-level insights on the rare-earth mineral monazite to inform future design of flotation collector molecules, illustrated above, that can aid in the recovery of critical materials. Credit: Chad Malone/ORNL, U.S. Dept. of Energy

Critical Materials Institute researchers at Oak Ridge National Laboratory and Arizona State University studied the mineral monazite, an important source of rare-earth elements, to enhance methods of recovering critical materials for energy, defense and manufacturing applications.

Simulation of short polymer chains

Oak Ridge National Laboratory scientists have discovered a cost-effective way to significantly improve the mechanical performance of common polymer nanocomposite materials.

Laminations such as these are compiled to form the core of modern electric vehicle motors. ORNL has developed a software toolkit to speed the development of new motor designs and to improve the accuracy of their real-world performance.

Oak Ridge National Laboratory scientists have created open source software that scales up analysis of motor designs to run on the fastest computers available, including those accessible to outside users at the Oak Ridge Leadership Computing Facility.

Materials—Polymer-theory-problem

Scientists at Oak Ridge National Laboratory have conducted a series of breakthrough experimental and computational studies that cast doubt on a 40-year-old theory describing how polymers in plastic materials behave during processing.