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 ORNL scientists studied ways to enhance the proposed memory cell performance and minimize access times and energies, yielding a novel cryogenic, or low-temperature, design that may resolve a memory storage bottleneck.
Scientists at Oak Ridge National Laboratory have proposed a novel cryogenic, or low-temperature, memory cell circuit design that may resolve a memory storage bottleneck, accelerating the pathway to exascale and quantum computing. The proposed design converges write, read and reset ...