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ORNL's Communications team works with news media seeking information about the laboratory. Media may use the resources listed below or send questions to news@ornl.gov.

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ORNL-developed cryogenic memory cell circuit designs fabricated onto these small chips by SeeQC, a superconducting technology company, successfully demonstrated read, write and reset memory functions. Credit: Carlos Jones/Oak Ridge National Laboratory, U.S. Dept. of Energy

Scientists at have experimentally demonstrated a novel cryogenic, or low temperature, memory cell circuit design based on coupled arrays of Josephson junctions, a technology that may be faster and more energy efficient than existing memory devices.

ORNL staff members (from left) Ashley Shields, Michael Galloway, Ketan Maheshwari and Andrew Miskowiec are collaborating on a project focused on predicting and analyzing crystal structures of new uranium oxide phases. Credit: Jason Richards/ORNL

Scientists at the Department of Energy’s Oak Ridge National Laboratory are working to understand both the complex nature of uranium and the various oxide forms it can take during processing steps that might occur throughout the nuclear fuel cycle.