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The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.
High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.
Distortion in scanning tunneling microscope (STM) images is an unavoidable problem. This technology is an algorithm to identify and correct distorted wavefronts in atomic resolution STM images.
When a magnetic field is applied to a type-II superconductor, it penetrates the superconductor in a thin cylindrical line known as a vortex line. Traditional methods to manipulate these vortices are limited in precision and affect a broad area.
High strength, oxidation resistant refractory alloys are difficult to fabricate for commercial use in extreme environments.
Moisture management accounts for over 40% of the energy used by buildings. As such development of energy efficient and resilient dehumidification technologies are critical to decarbonize the building energy sector.
Molecular Beam Epitaxy is a traditional technique for the synthesis of thin film materials used in the semiconducting and microelectronics industry. In its essence, the MBE technique heats crucibles filled with ultra-pure atomic elements under ultra high vacuum condition
In manufacturing parts for industry using traditional molds and dies, about 70 percent to 80 percent of the time it takes to create a part is a result of a relatively slow cooling process.