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The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.
High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.
Distortion in scanning tunneling microscope (STM) images is an unavoidable problem. This technology is an algorithm to identify and correct distorted wavefronts in atomic resolution STM images.
Through the use of splicing methods, joining two different fiber types in the tow stage of the process enables great benefits to the strength of the material change.
This invention presents technologies for characterizing physical properties of a sample's surface by combining image processing with machine learning techniques.
This invention introduces a system for microscopy called pan-sharpening, enabling the generation of images with both full-spatial and full-spectral resolution without needing to capture the entire dataset, significantly reducing data acquisition time.