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Comparison of 22 kHz and 85 kHz 50 kW Wireless Charging System Using Si and SiC Switches for Electric Vehicle...

by Moinul Shahidul Haque, Mostak Mohammad, Jason L Pries, Seungdeog Choi
Publication Type
Conference Paper
Journal Name
IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Publication Date
Page Numbers
192 to 198
Volume
6
Issue
0
Conference Name
Wide Bandgap Power Devices and Applications (WiPDA 2018)
Conference Location
Atlanta, Georgia, United States of America
Conference Sponsor
IEEE
Conference Date
-

Fast charging in transportation application requires high-power (>50 kW) operation. The overall size of wireless charging systems (WCS) must increase to meet the high-power requirement. As a result, high power systems produce more electromagnetic field (EMF) emissions. Although higher operating frequencies (85 kHz) reduce the size of inductors and capacitors, system losses tend to increase. High-power systems are traditionally investigated for 10 kHz to 22 kHz operation to reduce the switching loss in the converter, and conductive and magnetic losses in the power pad. The use of SiC MOSFETs reduces conduction and switching losses in the converter even at higher frequencies. In this paper, a comprehensive loss comparison of 50 kW wireless charging system is conducted for 85 kHz and 22 kHz operation of Si MOSFET and SiC MOSFET converters. Detailed performance indexes are compared analytically as a function of frequency and verified using FEA and PLECS. This comprehensive system level study shows that magnetic losses can be reduced significantly, and that EMF emission can be reduced by 50% by moving from 22 kHz to 85 kHz. Moreover, the system requires 50% less copper and allows a significant reduction in the size of the primary and secondary filter capacitor at 85 kHz. The results show that the system efficiency at 85 kHz can be increased by 21% compared to 22 kHz operation by using a SiC MOSFET converter.