1 - 10 of 52 Results
Dual-GP addresses limitations in traditional GPBO-driven autonomous experimentation by incorporating an additional surrogate observer and allowing human oversight, this technique improves optimization efficiency via data quality assessment and adaptability to unanticipated exp
A novel strategy was developed to solve the limitations of the current sorbent systems in CO2 chemisorption in terms of energy consumption in CO2 release and improved CO2 uptake capacity.
Currently available cast Al alloys are not suitable for various high-performance conductor applications, such as rotor, inverter, windings, busbar, heat exchangers/sinks, etc.
The invented alloys are a new family of Al-Mg alloys. This new family of Al-based alloys demonstrate an excellent ductility (10 ± 2 % elongation) despite the high content of impurities commonly observed in recycled aluminum.
This invention introduces a novel sintering approach to produce hard carbon with a finely tuned microstructure, derived from biomass and plastic waste.
The increasing demand for high-purity lanthanides, essential for advanced technologies such as electronics, renewable energy, and medical applications, presents a significant challenge due to their similar chemical properties.
A new nanostructured bainitic steel with accelerated kinetics for bainite formation at 200 C was designed using a coupled CALPHAD, machine learning, and data mining approach.
The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.
With the ever-growing reliance on batteries, the need for the chemicals and materials to produce these batteries is also growing accordingly. One area of critical concern is the need for high quality graphite to ensure adequate energy storage capacity and battery stability.
High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.