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Researcher
- Rama K Vasudevan
- Sergei V Kalinin
- Yongtao Liu
- Kevin M Roccapriore
- Kyle Kelley
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- Singanallur Venkatakrishnan
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ORNL researchers have developed a deep learning-based approach to rapidly perform high-quality reconstructions from sparse X-ray computed tomography measurements.

Dual-GP addresses limitations in traditional GPBO-driven autonomous experimentation by incorporating an additional surrogate observer and allowing human oversight, this technique improves optimization efficiency via data quality assessment and adaptability to unanticipated exp

High-gradient magnetic filtration (HGMF) is a non-destructive separation technique that captures magnetic constituents from a matrix containing other non-magnetic species. One characteristic that actinide metals share across much of the group is that they are magnetic.

The invention presented here addresses key challenges associated with counterfeit refrigerants by ensuring safety, maintaining system performance, supporting environmental compliance, and mitigating health and legal risks.

A pressure burst feature has been designed and demonstrated for relieving potentially hazardous excess pressure within irradiation capsules used in the ORNL High Flux Isotope Reactor (HFIR).

We have been working to adapt background oriented schlieren (BOS) imaging to directly visualize building leakage, which is fast and easy.

V-Cr-Ti alloys have been proposed as candidate structural materials in fusion reactor blanket concepts with operation temperatures greater than that for reduced activation ferritic martensitic steels (RAFMs).

The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.

Sintering additives to improve densification and microstructure control of UN provides a facile approach to producing high quality nuclear fuels.

High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.