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This invention addresses a key challenge in quantum communication networks by developing a controlled-NOT (CNOT) gate that operates between two degrees of freedom (DoFs) within a single photon: polarization and frequency.

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Fabrication methods are needed that are easily scalable, will enable facile manufacturing of SSEs that are < 50 µm thick to attain high energy density, and also exhibit good stability at the interface of the anode. Specifically, Wu et al.