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The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.
High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.
Through the use of splicing methods, joining two different fiber types in the tow stage of the process enables great benefits to the strength of the material change.
Technologies directed quantum spectroscopy and imaging with Raman and surface-enhanced Raman scattering are described.
This invention presents technologies for characterizing physical properties of a sample's surface by combining image processing with machine learning techniques.