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The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.
High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.
This work seeks to alter the interface condition through thermal history modification, deposition energy density, and interface surface preparation to prevent interface cracking.
Additive manufacturing (AM) enables the incremental buildup of monolithic components with a variety of materials, and material deposition locations.
Ceramic matrix composites are used in several industries, such as aerospace, for lightweight, high quality and high strength materials. But producing them is time consuming and often low quality.
Technologies directed quantum spectroscopy and imaging with Raman and surface-enhanced Raman scattering are described.