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System and method for part porosity monitoring of additively manufactured components using machining
In additive manufacturing, choice of process parameters for a given material and geometry can result in porosities in the build volume, which can result in scrap.

A pressure burst feature has been designed and demonstrated for relieving potentially hazardous excess pressure within irradiation capsules used in the ORNL High Flux Isotope Reactor (HFIR).

This manufacturing method uses multifunctional materials distributed volumetrically to generate a stiffness-based architecture, where continuous surfaces can be created from flat, rapidly produced geometries.

The lack of real-time insights into how materials evolve during laser powder bed fusion has limited the adoption by inhibiting part qualification. The developed approach provides key data needed to fabricate born qualified parts.

An electrochemical cell has been specifically designed to maximize CO2 release from the seawater while also not changing the pH of the seawater before returning to the sea.

Distortion generated during additive manufacturing of metallic components affect the build as well as the baseplate geometries. These distortions are significant enough to disqualify components for functional purposes.

The ORNL invention addresses the challenge of poor mechanical properties of dry processed electrodes, improves their electrical properties, while improving their electrochemical performance.

The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.

For additive manufacturing of large-scale parts, significant distortion can result from residual stresses during deposition and cooling. This can result in part scraps if the final part geometry is not contained in the additively manufactured preform.

High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.