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The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.
High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.
When a magnetic field is applied to a type-II superconductor, it penetrates the superconductor in a thin cylindrical line known as a vortex line. Traditional methods to manipulate these vortices are limited in precision and affect a broad area.