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Towards Fully Integrated High Temperature Wireless Sensors Using GaN-based HEMT Devices...

by Phani Teja V Kuruganti, Syed K Islam, Mohammad A Huque
Publication Type
Conference Paper
Publication Date
Conference Name
IEEE Midwest Symposium on Ciruits and Systems
Conference Location
Knoxville, Tennessee, United States of America
Conference Date
-

Wireless sensors which are capable of working at
extreme environments can significantly improve the efficiency
and performance of industrial processes by facilitating better
control systems. GaN, a widely researched wide bandgap
material, has the potential to be used both as a sensing material
and to fabricate control electronics, making it a prime candidate
for high temperature integrated wireless sensor fabrication. In
this paper we are presenting an experimental study on
AlGaN/GaN HEMT's performance at higher temperature (up to
300�C). From test results, DC and microwave parameters at
different temperatures were extracted.