Publication Type
Journal
Journal Name
Journal of Applied Physics
Publication Date
Page Number
153704
Volume
114
Issue
15
Abstract
We investigate the thermoelectric properties of β-FeSi2 using first principles electronic structure and Boltzmann trans- port calculations. We report a high thermopower for both p- and n-type β-FeSi2 over a wide range of carrier concentra- tion and in addition find the performance for n-type to be higher than for the p-type. Our results indicate that, depending upon temperature, a doping level of 3×1020 - 2×1021 cm−3 may optimize the thermoelectric performance.
