Abstract
An extremely large linear magnetoresistance (LMR) is a ubiquitous phenomenon emerging from topological Dirac and Weyl semimetals. However, the connection between an LMR and a nontrivial topology is under extensive debate. In this paper, by precisely controlling the thickness of SrNbO3 thin films grown on SrTiO3 substrates, we observe an LMR over a large carrier density range with a magnetoresistance as high as 150000% at a carrier density n∼1021cm−3, far away from the quantum-limit regime. The temperature-, magnetic-field-, and carrier-density-dependent LMR in SrNbO3/SrTiO3 heterostructures provides compelling evidence of a mobility-driven LMR in coherent electronic systems. Our results uncover the general principle of an LMR and shed light on proper categorization of transport properties in topological and correlated materials.
