Publication Type
Conference Paper
Book Title
2018 IEEE Transportation Electrification Conference and Expo (ITEC)
Publication Date
Page Numbers
1039 to 1045
Publisher Location
New Jersey, United States of America
Conference Name
2018 IEEE Transportation Electrification Conference and Expo (ITEC)
Conference Location
Long Beach, California, United States of America
Conference Sponsor
IEEE Industry Applications Society, IEEE Power & Energy Society, IEEE Power Electronics Society.
Conference Date
-
Abstract
In this paper, the static and dynamic characteristics of discrete 650 V and 1200 V trench TO 247 SiC MOSFET is evaluated and compared with a similar current rating 1200 V planar gate discrete TO 247 SiC MOSFET. The new trench MOSFET has promising application for vehicle charging and auxiliary power supply application due to the lower on-state resistance and lower capacitance. Static characteristics for these devices are evaluated using a curve tracer for different device junction temperature A common double pulse test (DPT) platform is developed to evaluate the switching loss at different device junction temperature ranging from 25°C to 175°C. The experimental setup and results are presented for different load currents and temperature.
