Publication Type
Journal
Journal Name
Journal of Applied Physics
Publication Date
Page Number
103719
Volume
102
Issue
10
Abstract
We report the synthesis and chemical, structural, and transport properties characterization of Ba8Ga16SixGe30-x type I clathrates with similar Ga-to-group IV element ratios but with increasing Si subsitution (4 < x < 14). Substitution of 20 at. % Si within the Ga-Ge lattice framework of the type I clathrate Ba8Ga16Ge30 results in thermoelectric enhancement. The unique dependences of n, ��, |S|, and m* with Si substitution, and the lack of variation in the Ga-to-group IV element ratios may imply a modified band structure with x. These results indicate an additional method in tuning the electronic properties of Ba8Ga16Ge30 for thermoelectric applications.
