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Response to the comments by J.H. Evans...

by Aleksandr Barashev, Stanislav I Golubov
Publication Type
Journal
Journal Name
Philosophical Magazine
Publication Date
Page Numbers
211 to 214
Volume
91
Issue
2

Evans’s comments are related only loosely to the main body of our paper, which is devoted to the onset of void ordering: his Monte Carlo (MC) simulations of this early stage of ordering are in a qualitative agreement with our results. They question, however, the basic mechanisms of damage accumulation revealed by a number of scientists using various techniques over the years. Here we argue that his views are erroneous due to overlooking some essential features of one-dimensional defect transport.