Quantum oscillation of Rashba spin splitting in topological insulator Bi2Se3 induced by the quantum size effects of Pb adlaye...

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Physical Review B

Publication Date

October, 2012

Page Number

155317

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Abstract

Basedonﬁrst-principlescalculationswithindensityfunctionaltheory,weﬁndthatPbadlayerscaninduceagiantRashbaspinsplittinginthequantumwellstatesofanunderlyingBi2Se3ﬁlm.AsthethicknessofthePbadlayersvaries,thedistancebetweenthePbadlayerandtheBi2Se3ﬁlm,thechargedensityattheinterface,andthebindingbetweenthePbadlayersexhibitanoscillatorybehaviorduetothequantumsizeeffects,whichinturnmodulatesthemagnitudeoftheRashbaspinsplittingofthequantumwellstatesintheBi2Se3ﬁlm.

Quantum oscillation of Rashba spin splitting in topological insulator Bi2Se3 induced by the quantum size effects of Pb adlaye...

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