
Using neutrons to see the additive manufacturing process at the atomic level, scientists have shown that they can measure strain in a material as it evolves and track how atoms move in response to stress.
Using neutrons to see the additive manufacturing process at the atomic level, scientists have shown that they can measure strain in a material as it evolves and track how atoms move in response to stress.
ORNL has been selected to lead an Energy Earthshot Research Center, or EERC, focused on developing chemical processes that use sustainable methods instead of burning fossil fuels to radically reduce industrial greenhouse gas emissions to stem climate ch
A team of scientists with ORNL has investigated the behavior of hafnium oxide, or hafnia, because of its potential for use in novel semiconductor applications.
Eva Zarkadoula, an R&D staff member at ORNL's Center for Nanophase Materials Sciences, has been named guest editor in a special issue on "Interface Engineering and Property Functionalization" for JOM.
A series of new classes at Pellissippi State Community College will offer students a new career path — and a national laboratory a pipeline of workers who have the skills needed for its own rapidly growing programs.
When Addis Fuhr was growing up in Bakersfield, California, he enjoyed visiting the mall to gaze at crystals and rocks in the gem store.
Jingsong Huang, a staff scientist at ORNL’s Center for Nanophase Materials Sciences, has been selected as an associate editor of Frontiers in Soft Matter.
Eva Zarkadoula, an R&D staff member at ORNL’s Center for Nanophase Materials Sciences, has been appointed to the early career editorial board of Nuclear Materials and Energy.
ORNL researchers have identified a mechanism in a 3D-printed alloy – termed “load shuffling” — that could enable the design of better-performing lightweight materials for vehicles.
Rama Vasudevan, a research scientist at the Department of Energy’s Oak Ridge National Laboratory, has been elected a Fellow of the American Physical Society, or APS.