In fiscal year 2023 — Oct. 1–Sept. 30, 2023 — Oak Ridge National Laboratory was awarded more than $8 million in technology maturation funding through the Department of Energy’s Technology Commercialization Fund, or TCF.
As current courses through a battery, its materials erode over time. Mechanical influences such as stress and strain affect this trajectory, although their impacts on battery efficacy and longevity are not fully understood.
Quantum computers process information using quantum bits, or qubits, based on fragile, short-lived quantum mechanical states.
Scientist-inventors from ORNL will present seven new technologies during the Technology Innovation Showcase on Friday, July 14, from 8 a.m.–4 p.m. at the Joint Institute for Computational Sciences on ORNL’s campus.
Zheng Gai, a senior staff scientist at ORNL’s Center for Nanophase Materials Sciences, has been selected as editor-in-chief of the Spin Crossover and Spintronics section of Magnetochemistry.
The presence of minerals called ash in plants makes little difference to the fitness of new naturally derived compound materials designed for additive manufacturing, an Oak Ridge National Laboratory-led team found.
Five technologies invented by scientists at the Department of Energy’s Oak Ridge National Laboratory have been selected for targeted investment through ORNL’s Technology Innovation Program.
Researchers at the Department of Energy’s Oak Ridge National Laboratory and their technologies have received seven 2022 R&D 100 Awards, plus special recognition for a battery-related green technology product.
A multidisciplinary team of scientists at ORNL has applied a laser-interference structuring, or LIS, technique that makes significant strides toward eliminating the need for hazardous chemicals in corrosion protection for vehicles.
Scientists at ORNL and the University of Tennessee, Knoxville, have found a way to simultaneously increase the strength and ductility of an alloy by introducing tiny precipitates into its matrix and tuning their size and spacing.