From materials science and earth system modeling to quantum information science and cybersecurity, experts in many fields run simulations and conduct experiments to collect the abundance of data necessary for scientific progress.
Five researchers at the Department of Energy’s Oak Ridge National Laboratory have been named ORNL Corporate Fellows in recognition of significant career accomplishments and continued leadership in their scientific fields.
Researchers at ORNL have developed a quantum chemistry simulation benchmark to evaluate the performance of quantum devices and guide the development of applications for future quantum computers.
Students often participate in internships and receive formal training in their chosen career fields during college, but some pursue professional development opportunities even earlier.
Researchers at the Department of Energy’s Oak Ridge National Laboratory have received five 2019 R&D 100 Awards, increasing the lab’s total to 221 since the award’s inception in 1963.
Scientists have tested a novel heat-shielding graphite foam, originally created at Oak Ridge National Laboratory, at Germany’s Wendelstein 7-X stellarator with promising results for use in plasma-facing components of fusion reactors.
Researchers at the Department of Energy’s Oak Ridge National Laboratory have received six R&D 100 Awards in recognition of their significant advancements in science and technology.
The Department of Energy’s Oak Ridge National Laboratory is the recipient of six awards from DOE’s Office of Science aimed at accelerating quantum information science (QIS), a burgeoning field of research increasingly seen as vital to scientific innovation
A tiny vial of gray powder produced at the Department of Energy’s Oak Ridge National Laboratory is the backbone of a new experiment to study the intense magnetic fields created in nuclear collisions.
A new way to grow narrow ribbons of graphene, a lightweight and strong structure of single-atom-thick carbon atoms linked into hexagons, may address a shortcoming that has prevented the material from achieving its full potential in electronic applications.