SUSS MicroTec MA6/BA6 Gen3 contact mask aligner systems with broadband (405-365nm) exposure optics
Specifications
- Topside (TSA) and backside alignment (BSA) capabilities
- Accuracy: <800nm, for TSA in vacuum contact mode, and 1mm for BSA
- 5x and 10x objectives
- Mask sizes 4”x 4” and 5” x 5”
- Allows patterning and alignment from 5mm x 5mm chip size up to 100mm wafer, with 10 mm thickness max
- Exposure modes:
- Vacuum contact, soft contact, hard contact, and proximity
- Constant power or constant dose
- Flood exposure, split exposure
Recent Highlights
Strain tolerance of two-dimensional crystal growth on curved surfaces
Real-Time Sensing of Single-Ligand Delivery with Nanoaperture-Integrated Microfluidic Devices
Photolithography pattern aligned with e-beam pattern.
Image credit: Jake Swett (Univ. of Oxford)
Microcantilevers with four-layer photolithography patterns aligned using SUSS MA6
