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Oxford PECVD

PE-CVD

The Oxford Instruments PlasmaLab System 100 Plasma Enhanced Chemical Vapor Deposition (PECVD) tool is used to deposit a variety of thin-film materials at relatively modest temperatures on a variety of substrate materials. The tool utilizes one or two RF generators to deposit thin films at temperatures lower than traditional chemical vapor deposition systems.

Applications

Silicon dioxide, porous silicon oxide, silicon nitride, silicon oxynitride, amorphous silicon thin-film depositions.

Electrical insulator, gate dielectric, MEMS device material, sacrificial etch layer, etch hard mask, passivation layer, free standing cantilevers and membranes, fluidic platforms, etc..

SiO2 coated structures
Sealing RIE-etched silicon microfluidic channels of pillar arrays with PECVD silicon oxide.
pillars
RIE etched silicon nanopillar arrays covered with PECVD porous silicon oxide.
porous silicon oxide
PECVD Porous Silicon Oxide; SEM imaging at an angle confirms granular nature of the film. Higher resolution images indicate abundance of nanogaps in the 5-50 nm range.

Specifications

  • Heated electrode (30 to 650 °C)
  • Dual frequency 500 Watt RF generators
  • Stress control during deposition process
  • 4” wafer processing down to small chips
  • 4” cross wafer thickness uniformity typically <+/-3%

Recent Publications

Enclosed pillar arrays integrated on a fluidic platform for on-chip separations and analysis

Enhanced Interfacial Adhesion and Osteogenesis for Rapid “Bone-like” Biomineralization by PECVD-Based Silicon Oxynitride Overlays

Contacts