The RTP utilizes infrared lamp heating and is capable of controlled ramp rates or rapid maximum ramp rates approaching 100 °C per second. Samples can be heated in excess of 1200 °C in various ambient conditions and pressures ranging from 10 mTorr to atmospheric pressure.
- Growth of nanomaterials on lithographically defined metal thin-films, modulation of thin film stress, modulation of as deposited thin film stoichiometry via reduction and/or oxidation, reflow/dewetting of materials during annealing, driving of dopants into materials to control electrical behavior and/or etch sensitivity.
- Solid phase dewetting of thin metal films is a convenient bottom up strategy that enables facile nanoscale patterning without lithography.
- Recipe controlled processing
- Temperatures up to 1200 °C
- Process pressure from 10 mTorr up to atmospheric pressure
- H2, O2, Ar, and N2 process gases
- Single 4” wafer or small chip processing