Foucher portrait

Alexandre C Foucher

R&D Associate Scientist

Alexandre C. Foucher received his Ph.D. in Materials Science and Engineering at the University of Pennsylvania in 2022. His dissertation focused on in situ scanning transmission electron microscopy (STEM) investigation of bimetallic nanocatalysts in a realistic environment. He then completed his postdoctoral training at the Massachusetts Institute of Technology (MIT) and joined ORNL as an R&D Associate in October 2024. 

Alexandre is specialized in valence state analysis with electron energy-loss spectroscopy (EELS), electron pair-distribution function (ePDF) analysis, synthesis of nanomaterials, as well as correlative STEM and X-ray absorption (XAS) spectroscopy diagnostics. His previous work focused on nanoparticles for catalysis, but also thin films for nanoelectronics. At ORNL, he continues to work on in situ STEM analysis of nanocatalysts to guide their rational design, as part of the Bioengineering Technologies Office (BETO). The goal is to understand degradation mechanisms, morphological changes and the structure-property correlation of innovative nanocatalysts used to decarbonize the transportation sector, transform organic waste into valuable products and ultimately mitigate greenhouse gas emissions. 

2024-present: R&D Associate Scientist, Oak Ridge National Laboratory

2022-2024: Postdoctoral Associate, Dept. of Materials Science and Engineering, Massachusetts Institute of Technology

2017-2022: Graduate Research Associate, Dept. of Materials Science and Engineering, University of Pennsylvania

2019: Graduate Student Fellow of the Vagelos Institute for Energy Science and Technology, University of Pennsylvania. 

2022: University of Pennsylvania, Ph.D., Materials Science and Engineering

2017: Rice University, Master of Materials Science and Nanoengineering

2017: Arts et Métiers ParisTech, Combined B.S./M.S., Mechanical and Industrial Engineering

Reviewer for ACS Catalysis, ACS Applied Materials and Interfaces, ACS Applied Energy Materials

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