UV Ozone Treatment for Improving Contact Resistance on Graphene

Abstract

Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3x10-6 Ω-cm2) compared to untreated surfaces (4x10-3 Ω-cm2). Subsequent annealing at 300 °C lowers the minimum value achieved to 7x10-7 Ω-cm2. Ozone exposure beyond an optimum time (6 mins in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.