June 2011

Journal

Transport properties of hole-doped CuBiS$_{2}$

By:
Parker, David S; Singh, David J
Journal Name:
Physical Review B
Page Number:
233206
Volume:
83
Issue Number:
23
Publication Date:
June 2011
View DOI Listing:
https://doi.org/10.1103/PhysRevB.83.233206

Abstract

We present the results of density-functional theory and Boltzmann transport calculations suggesting that hole-doped CuBiS$_{2}$ - a material commonly available as a mineral and comprised of relatively inexpensive elements - may show good thermoelectric performance at ambient temperature.


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