March 2017

Journal

Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

By:
Zhang, Enxia; Fleetwood, D.; Hachtel, Jordan A; Liang, Chudong; Reed, Robert; Alles, Michael; Linten, Dimitri; Mitard, Jerome; Chisholm, Matthew F; Pantelides, Sokrates
Journal Name:
IEEE Transactions on Nuclear Science
Page Number:
226-232
Volume:
64
Issue Number:
1
Publication Date:
March 2017
View DOI Listing:
https://doi.org/10.1109/TNS.2016.2635023

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