Stacking Faults in YBa2Cu3O7-x: Measurement Using X-Ray Diffraction and Effects on Critical Current

Abstract

The density n of stacking faults (SFs) in epitaxial YBa2Cu3O7-x (Y123) films, consisting of extra CuO planes, is measured by fitting x-ray diffraction patterns using a random stacking model. The SF density is n=0.068 nm-1 in films grown by metal-organic deposition on textured templates and optimized for high Ic. The presence of SF is correlated with pinning of magnetic field (H) applied in the Y123 ab plane. SF can be nearly eliminated by a high temperature anneal, or by adding excess Dy, resulting in Ic which is nearly independent of the orientation of H.