September 2012

Journal

Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

By:
Tolbert, Leon M; Huque, Mohammad A; Blalock, Benjamin J; Islam, Syed K
Journal Name:
IET Power Electronics
Page Number:
1001-1009
Volume:
3
Issue Number:
6
Publication Date:
September 2012
View DOI Listing:
https://doi.org/10.1049/iet-pel.2008.0287