February 2006

Conference Paper

Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen

By:
Williams, J.; Isaacs-Smith, T.; Wang, S.; Ahyi, C.; Lawless, R.; Tin, C.; Dhar, S.; Franceschetti, Alberto G; Pantelides, Sokrates T; Feldman, Leonard C; Chung, G.; Chisholm, Matthew F
Page Number:
371
Volume:
786
Book Title:
Fundamentals of Novel Oxide/Semiconductor Interfaces
Publication Date:
February 2006
Conference Name:
2003 MRS Fall Meeting
Conference Location:
Boston, Massachusetts, United States of America
Conference Sponsor:
Materials Research Society