Localization/Quasi-Delocalization Transitions and Quasi-Mobility-Edges in Shell-Doped Nanowires

Abstract

We propose a novel concept, namely, shell-doping of nanowires, for control of carrier mobility in nanowires. Different from traditional doping, where dopant atoms are distributed uniformly inside nanowires, shell-doping spatially confines dopant atoms within a few atomic layers in the shell region of a nanowire. Our numerical results based on the Anderson model of electronic disorder show that electrons in a shell-doped nanowire exhibit a peculiar behavior very different from that of uniformly doped nanowires. Beyond some critical doping, electron dynamics in a shell-doped nanowire undergoes a localization/quasi-delocalization transition, namely, the electron diffusion length decreases in the regime of weak disorder but increases in the regime of strong disorder. This transition is a result of the existence of quasi-mobility-edges in the energy spectrum of the system, which can be exploited experimentally through control of electron concentration, carrier density, and degree of disorder.