October 2012

Conference Paper

Junction Temperature Measurement of IGBTs Using Short Circuit Current

By:
Wang, Fei ; Xu, Zhuxian ; Ning, Puqi
Page Number:
91-96
Publication Date:
October 2012
Conference Name:
IEEE Energy Conversion Congress and Exposition
Conference Location:
Raleigh, North Carolina, United States of America

Abstract

In this paper, a method is proposed to measure the junction temperatures of IGBT discrete devices and modules using short circuit current. Experimental results show that the short circuit current has good sensitivity, linearity and selectivity, which is suitable to be used as temperature sensitive electrical parameters (TSEP). Test circuit and hardware design are proposed for junction temperature measurement in single phase and three phase convertes. By connecting a temperature measurement unit to the converter and giving a short circuit pulse, the IGBT junction temperature can be measured.