February 2006

Journal

High-resolution elemental profiles of the silicon dioxide/4H-silicon carbide interface

By:
Chang, K.-C.; Cao, Y.; Porter, L.M.; Bentley, James ; Dhar, S.; Feldman, Leonard; Williams, J.
Journal Name:
Journal of Applied Physics
Page Number:
104920
Volume:
97
Issue Number:
10
Publication Date:
February 2006