October 2007

Conference Paper

Doping Characterization of InAs/GaAs Quantum Dot Heterostructure by Cross-Section Scanning Capacitance Microscopy

By:
Zhao, Z.; Zhang, W,; Yi, C.; Stiff-Roberts, A.; Rodriguez, Brian J; Baddorf, Arthur P
Page Number:
32
Volume:
N/A
Publication Date:
October 2007
Conference Name:
20th Annual Meeting of the IEEE Lasers and Electro-Optics Society
Conference Location:
Lake Buena Vista, California, United States of America

Abstract

Cross-section of multilayer InAs/GaAs quantum dot heterostructure has been characterized using scanning capacitance microscope to investigate dopant incorporation into quantum dot. Simulation of corresponding band structure was used to better understand the experiment result.