July 2014

Journal

Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing

By:
Lei, L.; Xi, Y.; Ahn, Ahihyun; Ren, F.; Gila, Brent; Pearton, S.; Kravchenko, Ivan I
Journal Name:
Journal of Vacuum Science & Technology B
Page Number:
052201
Volume:
32
Issue Number:
5
Publication Date:
July 2014

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