A UVLO Circuit in SiC Compatible with Power MOSFET Integration (pending entry)

Abstract

The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. The lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, was demonstrated to have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0°C and 200°C. Captured data show the circuit to be functional over a temperature range from -55°C to 300°C. The design of the circuit and test results is presented.