Publication Type
Journal
Journal Name
Physica Status Solidi B
Publication Date
Page Numbers
899 to 902
Volume
245
Issue
5
Abstract
A novel white-beam microdiffraction analysis of defects, strains and tilts in a free standing m-plane GaN film grown via hydride vapor phase epitaxy is presented. It is shown that misfit dislocations are grouped within cell boundaries creating local lattice rotations between the growing cells. Distribution of lattice rotations in the film is not homogeneous. Regions of large rotations are separated by low rotations regions. The dominating rotation axis is parallel direction.
