Abstract
The sublimation-recondensation growth of titanium nitride crystal with N/Ti ratio of 0.99 on tungsten substrate is reported. The growth rate dependence on temperature and pressure was determined, and the calculated activation energy is 775.8�29.8kJ/mol. The lateral and vertical growth rates changed with the time of growth and the fraction of the tungsten substrate surface covered. The orientation relationship of TiN (001) || W (001) with TiN [100] || W [110], a 45o angle between TiN [100] and W [100], occurs not only for TiN crystals deposited on W (001) textured tungsten but also for TiN crystals deposited on randomly orientated tungsten. This study demonstrates that this preferred orientational relationship minimizes the lattice mismatch between the TiN and tungsten.
