Publication Type
Journal
Journal Name
Physical Review B
Publication Date
Page Number
174111
Volume
88
Issue
17
Abstract
We present experimental evidence for the formation of ion tracks in amorphous Si induced by
swift heavy ion irradiation. An underlying core-shell structure consistent with remnants of a
high density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics
simulations. Ion track dimensions di er for as-implanted and relaxed Si as attributed to di erent
microstructures and melting temperatures. The identi cation and characterisation of ion tracks
in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy ion
irradiation in amorphous semiconductors.