Publication Type
Journal
Journal Name
Physical Review B
Publication Date
Page Number
014313
Volume
102
Issue
1
Abstract
Measurements and first-principles calculations probe the temperature-dependent thermal conductivity (k) of GaN films with large densities of highly oriented dislocations. We demonstrate that phonon-dislocation scattering is weaker than suggested by previous measurements, likely due to sample and experiment size effects. Nonetheless, dislocation-limited k is observed in samples with large dislocation densities and at lower temperatures where k anisotropy is also observed. Combination of experiment and theory give insights into the interplay of thermal resistance mechanisms limiting GaN functionalities and suggest pathways for tuning k via defect engineering.
