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Electron-hole asymmetry in the phase diagram of carrier-tuned CsV3Sb5

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Frontiers in Electronic Materials
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In this work, we study the effect of electron doping on the kagome superconductor CsV3Sb5. Single crystals and powders of CsV3Sb5−xTex are synthesized and characterized via magnetic susceptibility, nuclear quadrupole resonance, and x-ray diffraction measurements, where we observe a slight suppression of the charge density wave transition temperature and superconducting temperature with the introduction of electron dopants. In contrast to hole doping, both transitions survive relatively unperturbed up to the solubility limit of Te within the lattice. A comparison is presented between the electronic phase diagrams of electron- and hole-tuned CsV3Sb5.